S34ML02G104TFI010 Cypress Semiconductor Corp IC FLASH 2GBIT 25NS 48TSOP
Интегральные схемы (ИС) 48-TFSOP (0.724", 18.40mm Width)
Номер производителя:
S34ML02G104TFI010
Производитель:
Категория продукции:
Описание:
IC FLASH 2GBIT 25NS 48TSOP
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
S34ML02G104TFI010 Таблицы данных(PDF)
Access Time :
-
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
2Gb (128M x 16)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Packaging :
Tray
Part Status :
Active
Series :
ML-1
Supplier Device Package :
48-TSOP I
Technology :
FLASH - NAND
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
25ns
в наличии
19,710
Unit Price:
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Предложение
S34ML02G104TFI010 Конкурентные цены
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S34ML02G104TFI010 Особенности
S34ML02G104TFI010 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 48-TFSOP (0.724", 18.40mm Width), and Tray is its most common packaging method, which belongs to the ML-1 series, using 48-TSOP I, 2.7 V ~ 3.6 V is the most suitable voltage.
S34ML02G104TFI010 Подробная информация о продукции
:
S34ML02G104TFI010 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S34ML02G104TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML02G104TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML02G104TFI010 (PDF), цена S34ML02G104TFI010, Распиновка S34ML02G104TFI010, руководство S34ML02G104TFI010 и решение на замену S34ML02G104TFI010.
S34ML02G104TFI010 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34ML02G104TFI010 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34ML02G104TFI010 (PDF), цена S34ML02G104TFI010, Распиновка S34ML02G104TFI010, руководство S34ML02G104TFI010 и решение на замену S34ML02G104TFI010.
S34ML02G104TFI010 FAQ
:
1. What is the storage capacity of the S34ML02G104TFI010 NAND flash memory?
The S34ML02G104TFI010 NAND flash memory has a storage capacity of 2 gigabits, which is equivalent to 256 megabytes.
2. What interface does the S34ML02G104TFI010 NAND flash memory use for data transfer?
The S34ML02G104TFI010 NAND flash memory uses a standard 8-bit or 16-bit asynchronous interface for data transfer.
3. Can the S34ML02G104TFI010 NAND flash memory operate at industrial temperature ranges?
Yes, the S34ML02G104TFI010 NAND flash memory is designed to operate reliably within industrial temperature ranges, typically from -40°C to 85°C.
4. What is the maximum clock frequency supported by the S34ML02G104TFI010 NAND flash memory?
The S34ML02G104TFI010 NAND flash memory supports a maximum clock frequency of 50 MHz for optimal performance.
5. Does the S34ML02G104TFI010 NAND flash memory support hardware data protection features?
Yes, the S34ML02G104TFI010 NAND flash memory includes hardware data protection features such as block lock and OTP (One-Time Programmable) protection.
6. What are the typical erase and program times for the S34ML02G104TFI010 NAND flash memory?
The typical erase time for the S34ML02G104TFI010 NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
7. Is the S34ML02G104TFI010 NAND flash memory compatible with various NAND controllers?
Yes, the S34ML02G104TFI010 NAND flash memory is designed to be compatible with a wide range of NAND controllers for ease of integration.
8. What is the voltage supply range for the S34ML02G104TFI010 NAND flash memory?
The S34ML02G104TFI010 NAND flash memory operates within a voltage supply range of 2.7V to 3.6V for reliable performance.
9. Can the S34ML02G104TFI010 NAND flash memory be used in automotive applications?
Yes, the S34ML02G104TFI010 NAND flash memory is suitable for automotive applications and meets the necessary quality and reliability standards.
10. Does the S34ML02G104TFI010 NAND flash memory support advanced wear-leveling algorithms?
Yes, the S34ML02G104TFI010 NAND flash memory incorporates advanced wear-leveling algorithms to ensure uniform usage of memory blocks and extend the lifespan of the device.
The S34ML02G104TFI010 NAND flash memory has a storage capacity of 2 gigabits, which is equivalent to 256 megabytes.
2. What interface does the S34ML02G104TFI010 NAND flash memory use for data transfer?
The S34ML02G104TFI010 NAND flash memory uses a standard 8-bit or 16-bit asynchronous interface for data transfer.
3. Can the S34ML02G104TFI010 NAND flash memory operate at industrial temperature ranges?
Yes, the S34ML02G104TFI010 NAND flash memory is designed to operate reliably within industrial temperature ranges, typically from -40°C to 85°C.
4. What is the maximum clock frequency supported by the S34ML02G104TFI010 NAND flash memory?
The S34ML02G104TFI010 NAND flash memory supports a maximum clock frequency of 50 MHz for optimal performance.
5. Does the S34ML02G104TFI010 NAND flash memory support hardware data protection features?
Yes, the S34ML02G104TFI010 NAND flash memory includes hardware data protection features such as block lock and OTP (One-Time Programmable) protection.
6. What are the typical erase and program times for the S34ML02G104TFI010 NAND flash memory?
The typical erase time for the S34ML02G104TFI010 NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
7. Is the S34ML02G104TFI010 NAND flash memory compatible with various NAND controllers?
Yes, the S34ML02G104TFI010 NAND flash memory is designed to be compatible with a wide range of NAND controllers for ease of integration.
8. What is the voltage supply range for the S34ML02G104TFI010 NAND flash memory?
The S34ML02G104TFI010 NAND flash memory operates within a voltage supply range of 2.7V to 3.6V for reliable performance.
9. Can the S34ML02G104TFI010 NAND flash memory be used in automotive applications?
Yes, the S34ML02G104TFI010 NAND flash memory is suitable for automotive applications and meets the necessary quality and reliability standards.
10. Does the S34ML02G104TFI010 NAND flash memory support advanced wear-leveling algorithms?
Yes, the S34ML02G104TFI010 NAND flash memory incorporates advanced wear-leveling algorithms to ensure uniform usage of memory blocks and extend the lifespan of the device.
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