S34MS01G100BHI003 Cypress Semiconductor Corp IC FLASH 1GBIT 45NS 63BGA
Интегральные схемы (ИС) 63-VFBGA
Номер производителя:
S34MS01G100BHI003
Производитель:
Категория продукции:
Описание:
IC FLASH 1GBIT 45NS 63BGA
Состояние RoHs:
Без свинца / в соответствии с RoHS Таблицы данных:
S34MS01G100BHI003 Таблицы данных(PDF)
Access Time :
45ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
1Gb (128M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
63-VFBGA
Packaging :
Tape & Reel (TR)
Part Status :
Active
Series :
MS-1
Supplier Device Package :
63-BGA (11x9)
Technology :
FLASH - NAND
Voltage - Supply :
1.7 V ~ 1.95 V
Write Cycle Time - Word, Page :
45ns
в наличии
55,714
Unit Price:
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S34MS01G100BHI003 Конкурентные цены
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S34MS01G100BHI003 Особенности
S34MS01G100BHI003 is produced by Cypress Semiconductor Corp, belongs to объем памяти, and its best working temperature is -40°C ~ 85°C (TA), the size is 63-VFBGA, and Tape & Reel (TR) is its most common packaging method, which belongs to the MS-1 series, using 63-BGA (11x9), 1.7 V ~ 1.95 V is the most suitable voltage.
S34MS01G100BHI003 Подробная информация о продукции
:
S34MS01G100BHI003 — это объем памяти, буферные усилители, разработанные и
произведенные
Cypress Semiconductor Corp.
S34MS01G100BHI003 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34MS01G100BHI003 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34MS01G100BHI003 (PDF), цена S34MS01G100BHI003, Распиновка S34MS01G100BHI003, руководство S34MS01G100BHI003 и решение на замену S34MS01G100BHI003.
S34MS01G100BHI003 производства Cypress Semiconductor Corp можно приобрести на сайте CHIPMLCC.
Здесь вы можете найти различные виды электронных деталей от ведущих производителей мира.
S34MS01G100BHI003 компании CHIPMLCC прошел строгий контроль качества и соответствует всем требованиям.
Статус запасов, отмеченный на CHIPMLCC, предназначен только для справки.
Если вы не нашли запчасть, которую ищете, вы можете связаться с нами для получения дополнительной информации, такой как количество запасов в таблице данных S34MS01G100BHI003 (PDF), цена S34MS01G100BHI003, Распиновка S34MS01G100BHI003, руководство S34MS01G100BHI003 и решение на замену S34MS01G100BHI003.
S34MS01G100BHI003 FAQ
:
1. What is the maximum operating frequency of the S34MS01G100BHI003 NAND flash memory?
The maximum operating frequency of the S34MS01G100BHI003 NAND flash memory is 100MHz.
2. What is the typical power consumption of the S34MS01G100BHI003 during read operations?
The typical power consumption of the S34MS01G100BHI003 during read operations is 25mA.
3. Can the S34MS01G100BHI003 operate at extended temperature ranges?
Yes, the S34MS01G100BHI003 is designed to operate at extended temperature ranges from -40°C to 85°C.
4. What is the page size of the S34MS01G100BHI003 NAND flash memory?
The page size of the S34MS01G100BHI003 NAND flash memory is 2KB.
5. Does the S34MS01G100BHI003 support hardware data protection features?
Yes, the S34MS01G100BHI003 supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the maximum program/erase cycle endurance of the S34MS01G100BHI003?
The S34MS01G100BHI003 has a maximum program/erase cycle endurance of 100,000 cycles.
7. Is the S34MS01G100BHI003 compatible with standard NAND flash interfaces?
Yes, the S34MS01G100BHI003 is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 2.3.
8. What is the voltage supply range for the S34MS01G100BHI003?
The voltage supply range for the S34MS01G100BHI003 is 2.7V to 3.6V.
9. Does the S34MS01G100BHI003 support multiple plane operations?
Yes, the S34MS01G100BHI003 supports multiple plane operations for improved performance.
10. What is the typical data retention period of the S34MS01G100BHI003?
The typical data retention period of the S34MS01G100BHI003 is 10 years.
The maximum operating frequency of the S34MS01G100BHI003 NAND flash memory is 100MHz.
2. What is the typical power consumption of the S34MS01G100BHI003 during read operations?
The typical power consumption of the S34MS01G100BHI003 during read operations is 25mA.
3. Can the S34MS01G100BHI003 operate at extended temperature ranges?
Yes, the S34MS01G100BHI003 is designed to operate at extended temperature ranges from -40°C to 85°C.
4. What is the page size of the S34MS01G100BHI003 NAND flash memory?
The page size of the S34MS01G100BHI003 NAND flash memory is 2KB.
5. Does the S34MS01G100BHI003 support hardware data protection features?
Yes, the S34MS01G100BHI003 supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the maximum program/erase cycle endurance of the S34MS01G100BHI003?
The S34MS01G100BHI003 has a maximum program/erase cycle endurance of 100,000 cycles.
7. Is the S34MS01G100BHI003 compatible with standard NAND flash interfaces?
Yes, the S34MS01G100BHI003 is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 2.3.
8. What is the voltage supply range for the S34MS01G100BHI003?
The voltage supply range for the S34MS01G100BHI003 is 2.7V to 3.6V.
9. Does the S34MS01G100BHI003 support multiple plane operations?
Yes, the S34MS01G100BHI003 supports multiple plane operations for improved performance.
10. What is the typical data retention period of the S34MS01G100BHI003?
The typical data retention period of the S34MS01G100BHI003 is 10 years.
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